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Monday, August 3, 2020 | History

1 edition of Sputtering from oblique ion incidence using computer simulation technique found in the catalog.

Sputtering from oblique ion incidence using computer simulation technique

by H. Truman Holcombe

  • 176 Want to read
  • 9 Currently reading

Published by Naval Postgraduate School in Monterey, California .
Written in English

    Subjects:
  • Physics

  • ID Numbers
    Open LibraryOL25294604M

      The PIC-MC framework allows for simulation based tuning of industrial sputter coaters with respect to tailored film growth conditions, which will be an issue of future work. Keywords: Magnetron sputtering, plasma simulation, ion energy distribution function, particle-in-cell Monte-Carlo simulation, high performance computing, parallel.   A radioactive tracer technique was employed to determine the yield (atoms/ion) and angular distribution (atoms/ionsr) of atoms sputtered from Cu () and Mo () surfaces by a 1 to 10 keV Hg + ‐ion beam. Values of the yield for Ni () surfaces were also determined. Analytical models for normal and oblique ion incidence cases were fitted to the angular distribution data.

      Earlier books on this subject, i.e. "Sputtering by Particle Bombardment I - III" are nearly 20 years old. Since then a lot of new and important work has been performed and published in international journals. The book gives an overview on all the new results. This concerns especially a new summary of the measured and calculated sputtering yields with an algebraic approximation formula for the. – Sputtering – Ion implantation – Chemical reactions • For normal incidence of ions, the primary collision can not eject an atom off the surface. • However, the secondary collision can. • At oblique incidence, primary collisions can result in ejection. – Think billiard balls. Various Sputtering Regimes • Single Knock-On.

    lower target voltages than are possible for RF diode sputtering. Also here the deposition rates are relatively higher and cover large deposition areas. Low substrate heating allows the use of a variety of substrate for a wide variety of applications. Many coworkers [11, 12, 13, and 14] prepared MgIn2O4 thin films by sputtering technique.   The force probe uses for sensing a thin cantilever, which is an often applied technique in many fields [].A small circular target with a diameter of 20 mm is mounted at the free end of the Al 2 O 3 ceramic tube that serves as the mm long cantilever (see Fig. 1).The target will be exposed to a particle beam, for example in a vacuum chamber for testing of electric space propulsion systems.


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Sputtering from oblique ion incidence using computer simulation technique by H. Truman Holcombe Download PDF EPUB FB2

New chapters on computer simulation of sputtering and MEMS completes the update and insures that the new edition includes the most current and forward-looking coverage available; All applications discussed are supported by theoretical discussions, offering readers both the "how" and the "why" of each technique.

SputteringfromObliqueIonIncidence Using ComputerSimulationTechnique by HoraceTrumanHolcombe Ensign,UnitedStatesNavy B.S.,MidwesternUniversity,   Sputtering from oblique ion incidence using computer ADAPages: Sputtering from oblique ion incidence using computer simulation technique.

distribution is unlimitedA self-contained computer simulation of sputtering from 20 keV incident ions is not possible with present computers. However, a simulation can be done by considering primary and secondary collisions separately.

oblique ion : Horace Truman Holcombe. Using computer simulation techniques to design a tellurium target for I production B+ ions for normal and oblique angles of incidence.

Self-sputtering data of boron carbide were. The author's earlier work on computer simulation of density effects in sputtering is extended to higher energies and oblique incidence of bombarding ions.

Sputtering of GaAs under oblique 2–10 keV Cs ion bombardment is studied by means of computer simulation as applied to the experimental data by Verdeil et al. published recently. Special attention is given to the angular distribution of sputtered atoms in the steady-state limit and to the relevant concentrations of surface Ga and As atoms, S.

ditions. Computer simulation, therefore, is probably the most powerful technique for studying the basic mechanism of sputtering in multi-component targets, in which sputtering often results in such very complicated phenomena as ion-induced surface segregation 23) etc.

The first systematic use of computer simulation of sput. Effects of ion-induced surface roughness on sputtering of amorphous carbon under ion bombardment are studied by means of binary-collision computer simulation in a wide range of incidence angles.

Most simulations refer to 1–10 keV Ar ion bombardment, and sinusoidal ripple morphology is assumed. The sputtering and surface state evolution of Bi/Si targets under oblique incidence of keV Ar + ions have been investigated over the range of incidence angles 0° ⩽ θ i ⩽ 60°.

Increasing erosion of irradiated samples (whose surface thickness reduced by ̃3% at normal incidence up to ̃8% at θ = 60°) and their surface smoothing with reducing grain sizing were pointed out using. Surfaces of solids can be cleaned from contaminants by using physical sputtering in a vacuum.

Sputter cleaning is often used in surface science, vacuum deposition and ion plating. In Farnsworth, Schlier, George, and Burger reported using sputter cleaning in an ultra-high-vacuum system to prepare ultra-clean surfaces for low-energy electron.

Considerable attention has been paid to ion beam sputtering as an effective way to fabricate self-organized nano-patterns on various substrates. The significance of this method for patterning surfaces is that the technique is fast, simple, and less expensive. The possibility to create patterns on very large areas at once makes it even more attractive.

This book reviews various fascinating. Ion irradiation of nanoparticles leads to enhanced sputter yields if the nanoparticle size is of the order of the ion penetration depth. While this feature is reasonably well understood for collision-cascade sputtering, we explore it in the regime of collision-spike sputtering using molecular-dynamics simulation.

For the particular case of keV Xe bombardment of Au particles, we show that. The dynamically steady-state surface relief of polycrystalline copper sputtered by high-dose (10 18 19 ion/cm 2) 30 keV Ar + ion bombardment at room temperature has been traced as a function of the ion incidence angle θ i in a wide (°) angular range.

For each incidence angle the distribution of local slope angles of relief facets f(β) in ion incidence plane and the corresponding. The oblique angle configuration is a useful geometrical arrangement to promote the vacuum growth of nanostructured layers with high porosity and large specific surfaces [].The main feature of evaporation techniques operating under this configuration is the oblique arrival of sublimated species at a substrate and their subsequent condensation in the form of tilted columnar structures with.

Varieties of sputtering experience D.C. sputter deposition: Only for conducting materials. if DC sputtering were used for insulator. e.g. carbon, charge would accumulate at each electrode and quench plasma within 1 - 10 mico-sec.

+ Ar+ cathode anode-⊕ V ≈1kV C Ar t ion speed. The most important quantities are the sputtering yields, i.e. the average number of atoms eroded per incident ion. The latest results for the sputtering yields and their dependence on the incident energy and angle of incidence, as well as the energy and angular distributions of the sputtered atoms are presented.

A physical model and mathematical calculations of the maximum partial depths of origin of sputtered particles versus mass, energy, and the angle of incidence of ions bombarding a one-component amorphous target are presented. Calculations reveal that the maximum depth of origin of secondary particles depends on the primary-ion incidence angle, which attains the highest value at angles of the simulation of the growth of thin film deposited by magnetron sputtering (Chap.

14). Although the technique is easy to use, it conceals enough challenges to remain scientific interesting. This explains its popularity in the academic world. Also in the industrial world, reactive magnetron sputtering remains.

Ion beam sputter deposition (IBSD) is a physical vapor deposition (PVD) technique that is capable of fulfilling the technological challenges.

In contrast to other PVD techniques, IBSD offers a unique opportunity to tailor the properties of the film-forming particles (sputtered target and scattered primary particles) and, hence, thin film. Recently, Kolasinksi23 (using a QCM method) and Tartz24 (using a weight loss technique) investigated total yields as a function of angle of incidence.

Also of note is Stepanova25,26 who has performed computer modeling of surface texture effects on sputtering at non-normal incidence.Sputter deposition is a physical vapor deposition (PVD) method of thin film deposition by involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer.

Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a wide energy distribution.New chapters on computer simulation of sputtering and MEMS completes the update and insures that the new edition includes the most current and forward-looking coverage available.

All applications discussed are supported by theoretical discussions, offering readers both the ''how'' and the ''why'' of each technique.